| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| MRF19030 MRF19030R3 MRF19030SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTD6N15 MTD6N15-1 MTD6N15T4 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount
TMOS Power 150V .3R
|
ON Semiconductor
|
| MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 |
RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF6S23100H MRF6S23100HR306 MRF6S23100HR3 MRF6S231 |
RF Power Field Effect Transistors
2300??400 MHz, 20 W Avg., 28 V, 2 x W??DMA Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF5S19150R3 MRF5S19150 MRF5S19150SR3 |
MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| APTGT100A60T1G |
Phase leg Trench Field Stop IGBT? Power Module
Phase leg Trench Field Stop IGBT垄莽 Power Module
|
Microsemi Corporation
|
